For 53 years the IEEE International Electron Devices Meeting (IEDM) has been the world’s premier forum for the presentation of advances in microelectronic and now nanoelectronic devices. The IEDM presents more leading work in more areas of the field than any other technical conference, encompassing silicon and non-silicon device technology, optoelectronics, MEMS (MicroElectroMechanical Systems), displays and nanotechnology for electronics applications. This year some 240 papers will be given by researchers from corporate, university and government labs worldwide. The IEDM also will include thought-provoking invited plenary talks; a stimulating luncheon speaker; evening panel sessions and short courses.

Welcome to the Editor Press Center.
The following press materials may be downloaded from
this site for pre-conference publicity for the IEDM:

2007 IEDM Press Kit

IEDM Lead Press Release
Tip Sheet (“highlights” of IEDM Technical Program)
IEDM Novel Energy-Harvesting Devices Press Release
Advanced Program 2.82 M

2007 IEDM Photos
- Washington, D.C. image (JPEG)
- IEDM logo (JPEG)

Selected images from the abstracts are presented in two formats:
- Word file with all images associated with a highlighted
paper and the caption,
- JPEG file with individual, High-Resolution Images.

Image Download

9.3 - Communication sheets using printed organic nonvolatile
memories,T. Sekitani, University of Tokyo
Image with caption
      9.3 Sheet Enables Ambient Communications
High Resolution Images
      9.3 Fig1a
      9.3 Fig1b
      9.3 Fig6d

17.2 - "Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash Memory," Y.Fukuzumi, Toshiba
Image with caption
      17.2 Memories of Macaroni
High Resolution Images
      17.2 Fig1
      17.2 Fig5
      17.2 Fig12
      17.2 Fig18

20.3 - "Single Metal/Dual High-k Gate Stack with Low Vth and Precise Gate Profile Control for Highly Manufacturable Aggressively Scaled CMISFETs," N. Mise, Selete
Image with caption
      20.3 One Common Metal Gate
High Resolution Images
      20.3 Fig1
      20.3 Fig5

27.5 - Localized SOI technology: an innovative Low Cost self-aligned process for Ultra Thin Si-film on thin BOX integration for Low Power applications," S.Monfray, STMicroelectronics
Image with caption
      27.5 Low Power And SoC Possibilities At 32 nm
High Resolution Images
      27-5 Fig1

Attendance at IEDM is complimentary for the press. Please
note that the conference organizers are planning to have a
press luncheon at the beginning of the IEDM to discuss the
most interesting papers and the major technology trends
evident in this year's program -- we encourage you to attend;
details will be provided shortly. Presenting companies often
make major technology announcements in conjunction with
the IEDM, either at their own press events or via news releases.

Whether you would like to do a news story, conference preview
or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.

For registration and other attendance information, the IEDM 2007 home page is www.ieee.org/conference/iedm. If you plan to attend, print out the page which requests your contact information,
write "Press" on it,and fax or mail it to Conference Manager
Phyllis Mahoney, 19803 Laurel Valley Place, Montgomery Village, MD 20886, USA; tel. (301) 527-0900, ext. 103; fax (301) 527-0994. Be prepared to show a business card when you arrive at the IEDM.
Phyllis also can be reached by email with any registration/
attendance questions at phyllism@widerkehr.com.