2015 IEEE International Electron Devices Meeting

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Welcome to the Editor Press Center. Check back periodically for photo and caption updates.

IEEE International Electron Devices Meeting (IEDM) is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electron-device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. The conference scope not only encompasses devices in silicon, compound, and organic semiconductors, but also emerging material systems.

The following press materials may be downloaded from
this site for pre-conference publicity for the 2015 IEDM:

2015 IEDM Press Kit

IEDM Posters and Flyers:

IEDM Press Releases:

2015 IEDM Photos:

Selected images from the abstracts are presented in two formats:

Paper 2.6 – “Direct Bandgap GeSn Microdisk Lasers at 2.5 µm for Monolithic Integration on Si-Platform” Stephan Wirths et al, Forschungszentrum Jülich/ Paul Scherrer Institute/ETH/University of Leeds/University of Grenoble/CEA LETI Minatec

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Paper 3.2 – “A Novel Double-density, Single-Gate Vertical Channel (SGVC) 3D NAND Flash That Is Tolerant to Deep Vertical Etching CD Variation and Possesses Robust Read-disturb Immunity” Hang-Ting Lue, Macronix

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Paper 5.6 – “Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels” Robin Degraeve et al, Imec

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Paper 6.5 – “20-nm-node Trench-Gate-Self-Aligned Crystalline In-Ga-Zn-Oxide FET with High Frequency and Low Off-State Current” Daisuke Matsubayashi et al, Semiconductor Energy Laboratory Co., LTD

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Paper 10.5 – “1Kbit FINFET Dielectric (FIND) RRAM in Pure 16nm FinFET CMOS Logic Process” Hsin Wei Pan, et al, National Tsing-Hua University/Taiwan Semiconductor Manufacturing Co.)

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Paper 14.1 – “Scalpel Soft Retrace Scanning Spreading Resistance Microscopy for 3D-carrier profiling in sub-10nm WFIN FinFET” Pierre Eyben et al, Imec

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Paper 14.2 – “Tunnel Junction Abruptness, Source Random Dopant Fluctuation and PBTI Induced Variability Analysis of GaAs0.4Sb0.6/In0.65Ga0.35As Heterojunction Tunnel FETs” R. Pandey et al, Pennsylvania State University

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Paper 15.1 – Diamond-shaped Ge and Ge0.9Si0.1 Gate-All-Around Nanowire FETs with Four {111} Facets by Dry Etch Technology” Yao-Jen Lee, et al, National Nano Device Laboratories/National Chiao Tung University/National Chi Nan University

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Paper 15.4 – “Gate-All-Around CMOS (InAs n-FET and GaSb p-FET) Based on Vertically-Stacked Nanowires on a Si Platform, Enabled by Extremely-Thin Buffer Layer Technology and Common Gate Stack and Contact Modules” Kian-Hui Goh et al, National University of Singapore/Nanyang Technological University

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Paper 15.7 – “Application-Oriented Performance of RF CMOS Technologies on Flexible Substrates” Justine Philippe et al, IEMN/STMicroelectronics/CEA LETI Minatec

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Paper 25.4 – “Low-Cost and TSV-free Monolithic 3D-IC with Heterogeneous Integration of Logic, Memory and Sensor Analogy Circuitry for Internet of Things” Tsung-Ta Wu et al, National Nano Device Laboratories/National Tsing Hua University

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Paper 26.5 – “20nm DRAM: A New Beginning of Another Revolution” Jemin Park et al, Samsung

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Paper 28.5 – “Physics-Based Compact Modeling Framework for State-of-the-Art and Emerging STT-MRAM Technology” Nuo Xu et al, Samsung

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Paper 29.5 – “High Density Optrode-Electrode Neural Probe Using SixNy Photonics for In Vivo Optogenetics” Luis Hoffman et al, Imec/KU Leuven

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Paper 30.1 – “Multi-Storied Photodiode CMOS Image Sensor for Multiband Imaging with 3D Technology” Y. Takemoto, et al, Olympus

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Paper 31.1 – “Gate-All-Around InGaAs Nanowire FETS with Peak Transconductance of 2200 μS/μm at 50nm Lg Using a Replacement Fin RMG Flow” N. Waldron et al, Imec/ASM

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Paper 32.1 – “High-Frequency Prospects of 2D Nanomaterials for Flexible Nanoelectronics from Baseband to Sub-THz Devices” Saungeun Park et al, University of Texas at Austin

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Paper 33.1 – “High Performance and Reliable Silicon Field Emission Arrays Enabled by Silicon Nanowire Current Limiters” Stephen Guerrera et al, MIT

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Attendance at IEDM is complimentary for the press.

If you plan to attend, please let us know. Also, the conference organizers are planning to have a press luncheon at the beginning of the IEDM to discuss the most interesting papers and the major technology trends evident in this year's program. We encourage journalists to attend it, and details will be provided in November.

Whether you would like to do a news story, conference preview or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.

Your registration/attendance questions also can be answered by the Conference Manager Phyllis Mahoney, at phyllism@widerkehr.com or by telephone at +1 301 527 0900.