The IEEE International Electron Devices Meeting (IEDM) is the world’s premier forum for the presentation of advances in microelectronic and now nanoelectronic devices. The IEDM presents more leading work in more areas of the field than any other technical conference, encompassing silicon and non-silicon device technology, optoelectronics, MEMS (MicroElectroMechanical Systems), displays and nanotechnology for electronics applications. This year some 200 papers will be given by researchers from corporate, university and government labs worldwide. The IEDM also will include thought-provoking invited plenary talks; a stimulating luncheon speaker; evening panel sessions and short courses.

Welcome to the Editor Press Center.
The following press materials may be downloaded from
this site for pre-conference publicity for the IEDM:

2008 IEDM Press Kit

IEDM 2008 Late News Release

IEDM Lead Press Release
Tip Sheet (“highlights” of IEDM Technical Program)
Advance Program 400K

2008 IEDM Photos
- San Francisco image (JPEG)
- IEDM logo (JPEG)

Selected images from the abstracts are presented in two formats:
- Word file with images associated with a highlighted
paper and the caption,
- JPEG file with individual, High-Resolution Images.

Image Download

21.4 - “Carbon-Based Resistive Memory,” F. Kreupl et al, Qimonda
Image with caption
     21.4 Carbon-Based Resistive Memory
High Resolution Images
     21.4 Fig2 (original) Please credit J. Huang for this photo
     21.4 Fig2 (additional)
     21.4 Fig4

27.1 - “22-nm Technology Compatible Fully Functional 0.1-µm2 6T-SRAM Cell,” B.S. Haran et al, IBM Alliance (IBM, AMD, Freescale)
Image with caption
     27.1 Smallest Functional SRAM Cell Ever Made
High Resolution Images
     27.1 Fig5
     27.1 Fig7

28.1 - “Highly Reliable CMOS-Integrated 11M-Pixel SiGe-Based Micro-Mirror Arrays for High-End Industrial Applications,”
L. Haspeslagh et al, IMEC
Image with caption
      28.1 11-Megapixel Resolution with SiGe Micromirrors
High Resolution Images
      28.1 Fig1
      28.1 Fig2
      28.1 Fig3

30.3 - “High -Performance 40nm Gate Length InSb P-Channel Compressively Strained Quantum Well Field Effect Transistors for Low Power (Vcc=0.5V) Logic Applications,” M. Radosavljevic et al, Intel
Image with caption
      30.3 140-GHz P-FET
High Resolution Images
      30.3

31.2 - “15nm-Diameter 3D Stacked Nanowires with Independent Gates Operation: ΦFET,” C. Dupre et al, CEA-LETI
Image with Caption
      31.2 Why Phi
High Resolution Images
      31.2 Fig2
      31.2 Fig4

Attendance at IEDM is complimentary for the press. Please
note that the conference organizers are planning to have a
press luncheon at the beginning of the IEDM to discuss the
most interesting papers and the major technology trends
evident in this year's program -- we encourage you to attend;
details will be provided shortly. Presenting companies often
make major technology announcements in conjunction with
the IEDM, either at their own press events or via news releases.

Whether you would like to do a news story, conference preview
or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.

For registration and other attendance information, the IEDM 2008 home page is www.ieee-iedm.org. If you plan to attend, print out the page which requests your contact information, write "Press" on it,and fax or mail it to Conference Manager Phyllis Mahoney, 19803 Laurel Valley Place, Montgomery Village, MD 20886, USA; tel. (301) 527-0900, ext. 103; fax (301) 527-0994. Be prepared to show a business card when you arrive at the IEDM. Phyllis also can be reached by email with any registration/attendance questions at phyllism@widerkehr.com.