The IEEE International Electron Devices Meeting (IEDM) is the world’s premier forum for the presentation of advances in microelectronic, nanoelectronic and bioelectronic devices. The IEDM presents more leading work in more areas of the field than any other technical conference, encompassing silicon and non-silicon device technology, optoelectronics, MEMS (MicroElectroMechanical Systems), displays and nanotechnology for electronics applications. This year some 215 papers will be given by researchers from corporate, university and government labs worldwide. The IEDM also will include thought-provoking invited plenary talks; a stimulating luncheon speaker; evening panel sessions and short courses.

Welcome to the Editor Press Center.
The following press materials may be downloaded from
this site for pre-conference publicity for the IEDM:

2009 IEDM Press Kit

IEDM Late News Press Release

IEDM Lead Press Release
Tip Sheet (“highlights” of IEDM Technical Program)
Advance Program 300K

2009 IEDM Photos
- Baltimore image (JPEG)
- IEDM logo (JPEG)

Selected images from the abstracts are presented in two formats:
- Word file with images associated with a highlighted
paper and the caption,
- JPEG file with individual, high-resolution Images.

Image Download

9.2 "Read/Write Operation of Spin-Based MOSFET Using Highly Spin-Polarized Ferromagnet/MgO Tunnel Barrier for Reconfigurable Logic Devices," T. Marukame et al, Toshiba
Image With Caption
9.2 Spintronics-Based MOSFET
High Resolution Images
9.2 Figure 1
9.2 Figure 1a
9.2 Figure 1b
9.2 Figure 1c
9.2 Figure 17

12.4 - “Demonstration of Scaled 0.099µm2 FinFET 6T-SRAM Cell Using Full-Field EUV Lithography for (Sub) 22 nm Node Single-Patterning Technology,” A. Veloso et al, IMEC
Image With Caption
12.4 Two-Level EUV Lithography
High Resolution Images
12.4 Figure 4
12.4 Figure 4 (left)
12.4 Figure 4 (right)
12.4 Figure 5
12.4 Figure 5 (top)
12.4 Figure 5 (bottom)
12.4 Figure 6
12.4 Figure 6a
12.4 Figure 6b and 6c
12.4 Figure 6d

13.1 - Paper #13.1, “Advanced High-k Dielectric for High-Performance Short-Channel InGaAs Quantum Well Field Effect Transistors on Silicon Substrate for Low-Power Logic Applications,” M. Radosavljevic et al, Intel
Image With Caption
13.1 Intel’s High-k Dielectric For Compound Semiconductors
High Resolution Images
13.1 Figure 8

13.4 - “First Experimental Demonstration of 100-nm Inversion-Mode InGaAs FinFET Through Damage-free Sidewall Etching,” Y.Q. Wu et al, Purdue
Image With Caption
13.4 First InGaAs FinFET
High Resolution Images
13.4 Figure 2

15.6 - “All Inkjet Printed Self-Aligned Transistors and Circuits Applications,” Huai-Yuan Tseng and Vivek Subramanian, University of California-Berkeley
Image With Caption
15.6 Macroelectronics Revolution
High Resolution Images
15.6 Figure 1
15.6 Figure 12
15.6 Figure 15

26.2 - “A Curvable Silicon Retinal Implant,” Rostam Dinyari et al, Stanford University
Image With Caption
26.2 Self-Powered Retinal Prosthetic
High Resolution Images
26.2 Figure 1
26.2 Figure 2a
26.2 Figure 2b
26.2 Figure 2c
26.2 Figure 2d
26.2 Figure 5a
26.2 Figure 5b
26.2 Figure 6a-1
26.2 Figure 6a-2
26.2 Figure 6b-1
26.2 Figure 6b-2

27.2 - “Monolithic Integration of NEMS-CMOS with Mechanically Flip-Flopped Fin Memory,” J-W. Han et al, KAIST
Image With Caption
27.2 Monolithic NEMS/CMOS Memory
High Resolution Images
27.2 Figure 1
27.2 Figure 2
27.2 Figure 6

27.3 - “Optimal Device Structure for Pipe-Shaped BiCS Flash Memory for Ultra High Density Storage Device with Excellent Performance and Reliability,” M. Ishiduki et al, Toshiba
Image With Caption
27.3 Pipe-Shaped BiCS Memory
High Resolution Images
27.3 Figure 1
27.3 Figure 18

Attendance at IEDM is complimentary for the press. Please
note that the conference organizers are planning to have a
press luncheon at the beginning of the IEDM to discuss the
most interesting papers and the major technology trends
evident in this year's program -- we encourage you to attend;
details will be provided shortly. Presenting companies often
make major technology announcements in conjunction with
the IEDM, either at their own press events or via news releases.

Whether you would like to do a news story, conference preview
or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.

For registration and other attendance information, the IEDM home page is www.ieee-iedm.org. If you plan to attend, print out the page which requests your contact information, write "Press" on it,and fax or mail it to Conference Manager Phyllis Mahoney, 19803 Laurel Valley Place, Montgomery Village, MD 20886, USA; tel. (301) 527-0900, ext. 103; fax (301) 527-0994. Be prepared to show a business card when you arrive at the IEDM. Phyllis also can be reached by email with any registration/attendance questions at phyllism@widerkehr.com.