2016 IEEE International Electron Devices Meeting

Welcome to the Editor Press Center. The following press materials may be downloaded from this site for pre-conference publicity for the 2016 IEDM.
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Contact Info
Conference Location

The following press materials may be downloaded from
this site for pre-conference publicity for the 2016 IEDM:

2016 IEDM Press Releases:

IEDM Photos with captions:

ATTENDANCE AT IEDM IS COMPLIMENTARY FOR THE PRESS.
If you plan to attend, please let us know. Also, the conference organizers are planning to have a press luncheon at the beginning of the IEDM to discuss the most interesting papers and the major technology trends evident in this year's program. We encourage journalists to attend it, and details will be provided in November.

Whether you would like to do a news story, conference preview or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.

Editor Contacts:
Gary Dagastine, co-Media Relations Director, at gdagastine@nycap.rr.com or by telephone at +1 518 785 2724
Chris Burke, co-Media Relations Director, at chris.burke@btbmarketing.com or by telephone at +1 919 872 8172

Registration/attendance questions:
Can be answered by the Conference Manager Phyllis Mahoney, at phyllism@widerkehr.com or by telephone at +1 301 527 0900.
19803 Laurel Valley Place, Montgomery Village, MD 20886 USA

ABOUT IEDM
IEEE International Electron Devices Meeting (IEDM) is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electron-device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation. The conference scope not only encompasses devices in silicon, compound, and organic semiconductors, but also emerging material systems.