The IEEE International Electron Devices Meeting (IEDM) is the world's premier forum for the presentation of advances in microelectronic, nanoelectronic and bioelectronic devices. The IEDM presents more leading work in more areas of the field than any other technical conference, encompassing silicon and non-silicon device technology, molecular electronics, nanotechnology, optoelectronics, MEMS/NEMS (micro-/nanoelectromechanical systems), energy-related devices and bioelectronics. The 58th annual IEDM conference includes a strong overall emphasis on circuit-device interaction, energy-harvesting and power devices, and biomedical devices.

Welcome to the Editor Press Center. The following press materials may be downloaded from this site for pre-conference publicity for the IEDM:

2012 IEDM Press Kit

IEDM Press Releases
Lead Release
Tip Sheet (“highlights” of IEDM Technical Program)
Advance Program 300K

Selected images from the abstracts are presented in two formats:
- Word file with images associated with a highlighted
paper and the caption,
- JPEG file with individual, high-resolution Images.

Image Download

3.1 "Intel's Complete 22-nm Tri-Gate Technology For SoC Applications"
C-H. Jan
Image With Caption
3.1, Intel's Complete 22-nm Tri-Gate Technology For SoC Applications - Intel
High Resolution Images
3.1 Figure 1a
3.1 Figure 1b
3.1 Figure 2a
3.1 Figure 2b
3.1 Figure 2c
3.1 Figure 2d
3.1 Figure 2e
3.1 Figure 2f
3.1 Table 1

18.1 "Hybrid-Channel 22nm SOI CMOS"
K. Cheng
Image With Caption
18.1, Hybrid-Channel 22nm SOI CMOS - IBM
High Resolution Image
18.1 Figure 8

23.5 "Ge Integrated Directly On Si For p-Type FinFETs"
M.J. van Dal
Image With Caption
23.5, Ge Integrated Directly On Si For p-Type FinFETs - TSMC R and D
High Resolution Image
23.5 Figure 1

8.4 "Ambipolar Nanowire FETs"
M. DeMarchi
Image With Caption
8.4, Ambipolar Nanowire FETs - EPFL
High Resolution Images
8.4 Figure 1
8.4 Figure 4
8.4 Figure 18

29.3 "Highest-Density ST-MRAM"
J. Slaughter
Image With Caption
29.3, Highest-Density ST-MRAM – Everspin Technologies, Inc.
High Resolution Images
29.3 Figure 4
29.3 Figure 10

2.3 "Horizontal Channels Key To Ultra-Small 3D NAND"
S.H. Chen
Image With Caption
2.3, Horizontal Channels Key To Ultra-Small 3D NAND
High Resolution Images
2.3 Figure 1a
2.3 Figure 1b
2.3 Figure 3
2.3 Figure 4

9.1 "Self-Healing Flash Memories"
H-T. Lue
Image With Caption
9.1, Self-Healing Flash Memories - Macronix
High Resolution Images
9.1 Figure 15

5.1 "Leading-Edge Logic On Plastic"
D. Shahrjerdi
Image With Caption
5.1, Leading-Edge Logic On Plastic - IBM
High Resolution Images
5.1 Figure 3
5.1 Figure 4

4.6 "Molybdenum Sulfide—the New Graphene?"
H. Wang
Image With Caption
4.6, Molybdenum Sulfide—the New Graphene? - US Army Research Lab
High Resolution Images
4.6 Figure 1a
4.6 Figure 1b
4.6 Figure 1c

10.2 "Brain-Like System With RRAM Synapses"
H. Hwang
Image With Caption
10.2, Brain-Like System With RRAM Synapses - Gwangju Institute of Science and Technology
High Resolution Images
10.2 Figure 19
10.2 Figure 22
10.2 Table 1

15.1 "Unreleased MEMS Resonator"
W. Wang
Image With Caption
15.1, 3.3 GHz Unreleased Si MEMS Resonator- MIT
High Resolution Images
15.1 Figure 1

Attendance at IEDM is complimentary for the press. If you plan to attend, please let us know. Also, the conference organizers are planning to have a press luncheon at the beginning of the IEDM to discuss the most interesting papers and the major technology trends evident in this year's program. We encourage journalists to attend it, and details will be provided in November.

Whether you would like to do a news story, conference preview or an in-depth exploration of a particular technology, please contact one of us for the additional information or interviews you may need.

Your registration/attendance questions also can be answered by the Conference Manager Phyllis Mahoney, at phyllism@widerkehr.com or by telephone at +1 301 527 0900.